New space-grade memory withstands radiation equivalent to 100 million x-rays

Georgia Tech researchers developed ferroelectric NAND flash memory using hafnium oxide for much tougher radiation tolerance.

The device was tested to 1 million rads, about 30 times more resilient than conventional NAND flash and equivalent to roughly 100 million x-rays.

The advance could make onboard data storage more reliable for satellites and deep-space missions.

It may also help support on-device AI processing in radiation-heavy space environments.