New US-Taiwan partnership targets silicon carbide wafers for faster, cooler 6G chips

Purdue University and Taiwan-based GeChi Compound Semiconductor signed a five-year MOU to advance silicon carbide research and manufacturing.

The partnership will focus on better crystal growth, lower defect rates, and scaling SiC wafers toward high-yield 8-inch and 12-inch production.

Silicon carbide is a key material for more efficient power electronics, cooler high-performance computing, and future 6G hardware.

The deal also includes workforce development to strengthen the U.S. semiconductor supply chain.